Semiconductor device and a method of producing the same

Abstract

A semiconductor device and a method of producing the semiconductor device, fabricated by forming a memory device and a logic device on a single semiconductor substrate, are provided. A side wall ( ) and a silicide protection film ( ) of a gate electrode ( ) are used instead of forming a silicide protection film in a logic device region ( ), whereby the number of steps in forming a logic process consolidating device can be reduced. Further, high concentration impurity regions are formed using the silicide protection film ( ) as a mask, whereby a degree of freedom of a condition of implanting ions becomes high. In a memory device region ( ), because the silicide protection film does not remain, an opening ( ) can be formed in a self-replicating manner without deteriorating reliability of the semiconductor device, whereby it is possible to realize a preferable electrical connection between a source/drain area of the semiconductor device to a wiring layer in a self-alignment contact opening of the memory device region ( ).