The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2002
Filed:
Mar. 24, 2000
Thomas S. Rupp, Stormville, NY (US);
Jeffrey P. Gambino, Westford, VT (US);
Peter Hoh, Hopewell Junction, NY (US);
Senthil Srinivasan, Paris, FR;
Infineon Technologies, AG, Munich, DE;
Abstract
In one aspect, the present invention discloses a transistor device (see e.g., FIG. ) that includes first and second source/drain regions and disposed in a semiconductor body and separated by a channel region A dielectric layer overlies the channel region and a gate electrode overlies the dielectric layer In the preferred embodiment, the gate electrode includes a polysilicon layer that extends a first lateral distance over the dielectric layer and a silicide layer that extends a second lateral distance over the first polysilicon layer. In this example, the first lateral distance is greater than the second lateral distance.