Led structure having a schottky contact and manufacturing method

Abstract

A structure and manufacturing method of LED is disclosed. The manufacturing method of the structure of LED comprises: providing a substrate; on the substrate, forming in sequence a buffer layer, a first confining layer, an active layer, a second confining layer and a window layer; forming a first metal electrode beneath the substrate; forming a second metal electrode on the window layer, wherein there is a schottky contact surface between the second metal electrode and the window layer; forming a third metal electrode on the second metal electrode, wherein the third metal electrode has a feature of high melting point; forming a fourth metal electrode on the third metal electrode and the window layer, wherein there is an ohmic contact surface between the window layer and the fourth metal electrode; and forming a fifth metal electrode on the fourth metal electrode, wherein the fifth metal electrode has a feature of good adhesion, and when the substrate, the buffer layer and the first confining layer are n-type or p-type, the type of the second confining layer and window layer are opposite. The carriers are blocked from moving downward by the energy barrier between the schottky electrode and the window layer, so that the carriers are forced to spread around enormously. Furthermore, by utilizing the third metal electrode having high melting point to be a block between the fourth metal electrode and the second metal electrode, the schottky contact induced between the window layer and the second metal electrode can be maintained. Thus, irradiation efficiency of LED is enhanced.