The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2002
Filed:
Aug. 31, 2001
Applicant:
Inventor:
Hidekazu Sato, Kuwana, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
The present invention is to form a new desirable silicon nitride film of lower dielectric constant even by using common gases. More preferably, it should be well compatible with copper wiring if it is applied as an interlayer insulating film. A silicon nitride film comprising a ratio of N:Si of from 1.0-1.1: and a ratio of O:Si of from 0.1-0.15:1, and being formed through catalytic CVD method by using monosilane and ammonia, and thereby having a relative dielectric constant of less than 6. Also, a semiconductor device is provided employing the above silicon nitride film as an interlayer insulating film, favorably, between copper layers.