The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Sep. 05, 2000
Fuji Xerox Co., Ltd., Tokyo, JP;
Abstract
The present invention provides a surface emitting semiconductor laser that, with a relatively simple construction, can control the polarization of laser beam to a given direction and obtain a low threshold current and high output. Also, the present invention provides a laser array that has substantially no variations in polarization properties among plural laser devices arranged on a single substrate. In a surface emitting semiconductor laser in which upper and lower reflecting mirror layers are formed on a main face of a semiconductor substrate to sandwich an active layer, at least one of the upper and lower reflecting films including a selective oxidation layer oxidized in a circumferential part thereof, the main face of the semiconductor substrate is tilted with respect to a face containing a reference crystal axis, and the selective oxidation layer is formed by oxidizing a layer to be oxidized from a circumferential part thereof, wherein the circumferential shape of the layer, when cut by a face parallel to the main face, has at least no singular point and is macroscopically smooth.