The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Aug. 31, 2001
Toshitaka Uchikoba, Hyogo, JP;
Kiyoto Ohta, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
Each of a plurality of sense amplifiers in a sense amplifier drive circuit of a DRAM includes a PMOS sense amplifier drive transistor and an NMOS sense amplifier drive transistor. The source of each of the PMOS sense amplifier drive transistors is connected to a first common power line and to multiple independent power lines orthogonal thereto. The source of each of the NMOS sense amplifier drive transistors is connected to a first common power line and to multiple independent power lines orthogonal thereto. Therefore, charging current and discharging current are distributed to the multiple power lines arranged in mesh-like pattern. Therefore, in sensing operations, the charging and the discharging currents in bit lines are distributed so that interference between the sense amplifiers can be suppressed and the data read-out speed can be increased.