The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Jun. 30, 1999
Applicant:
Inventors:
Patrick Clinton Arnett, Morgan Hill, CA (US);
David Cheekit Cheng, Palo Alto, CA (US);
Sakhrat Khizroev, Pittsburgh, PA (US);
David Allen Thompson, San Jose, CA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 ;
U.S. Cl.
CPC ...
G11B 5/39 ;
Abstract
Both the read and write heads are trimmed to approximately 100 nm wide, indicated by Wr and Ww, respectively. The etch depth for the MR element, MR Trenches, is 200 nm and the etch depth for the write head, Write Trenches, is 1 &mgr;m. In order to confirm that inactive regions are actually those selected for irradiation, during trimming the center of the trimmed MR element has been offset by approximately 300 nm from the center of the original MR element. This offset is observed in the final result.