The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Mar. 16, 2000
James W. Adkisson, Jericho, VT (US);
John A. Bracchitta, South Burlington, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Jerome B. Lasky, Essex Junction, VT (US);
Effendi Leobandung, Wappingers Falls, NY (US);
Kirk D. Peterson, Essex Junction, VT (US);
Jed H. Rankin, Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A double gated silicon-on-insulator (SOI) MOSFET is fabricated by using a mandrel shallow trench isolation formation process, followed by a damascene gate. The double gated MOSFET features narrow diffusion lines defined sublithographically or lithographically and shrunk, damascene process defined by an STI-like mandrel process. The double gated SOI MOSFET increases current drive per layout width and provides low out conductance.