The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Feb. 08, 2001
Ryo Saeki, Ichikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor light emitting device has a substrate made of a semiconductor of a first conductivity-type, a first light reflecting layer made of a semiconductor of the first conductivity-type and provided on a main surface of the substrate, an active layer made of a semiconductor including InGaAlP and provided on the first reflecting layer, a second light reflecting layer made of a semiconductor of a second conductivity-type and provided on the active layer, a current blocking layer having an opening, only through the opening a current flowing into the active layer, a transparent electrode provided on the second light reflecting layer, a front surface electrode provided on the transparent electrode and having an opening through which emission from the active layer is extracted; and a rear surface electrode provided on a rear surface of the substrate. The current supplied by the transparent electrode located under the opening of the front surface electrode and flowing into the active layer through the opening of the current blocking layer causes the active layer to emit light, the light being reflected repeatedly between the first and the second light reflecting layers and extracted via the transparent electrode under the opening of the front surface electrode.