The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2002

Filed:

Sep. 25, 2000
Applicant:
Inventors:

Lester J. Kozlowski, Simi Valley, CA (US);

Gerard J. Sullivan, Newbury Park, CA (US);

Roger E. Dewames, Thousand Oaks, CA (US);

Brian T. McDermott, Glendale, AZ (US);

Assignee:

Innovative Technology Licensing, LLC, Thousand Oaks, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7146 ; H01L 3/110 ; H01L 3/1103 ;
U.S. Cl.
CPC ...
H01L 2/7146 ; H01L 3/110 ; H01L 3/1103 ;
Abstract

A photodetector sensitive to ultraviolet wavelengths is capable of single photon sensitivity at room temperatures and video frame rates. It includes (a) a compound semiconductor photodiode, biased below its avalanche breakdown threshold, comprising III-V elemental components and having a bandgap with transition energy higher than the energy of visible photons; and (b) a high input impedance MOS interface circuit, arranged to receive a signal from the photodiode junction and to amplify said signal. Preferably, the photodiode junction is integrated in a first microstructure on a first substrate, and its interface circuit in a second microstructure on a second substrate. Both microstructures are then joined in a laminar, sandwich-like structure and communicate via electrically conducting contacts.


Find Patent Forward Citations

Loading…