The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Nov. 13, 2000
Applicant:
Inventors:
David Arfon Williams, Cambridge, GB;
Jeremy John Baumberg, Southampton, GB;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/100 ;
U.S. Cl.
CPC ...
H01L 3/100 ;
Abstract
Silicon possesses an indirect band-gap, which limits its use in some photonic applications. A phonon generator is included in a silicon-based device, which promotes electron-hole recombination and so allows silicon to emit photons efficiently. Phonons may be generated by optical or electrical stimulation or as a result energy relaxation of hot-electrons.