The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Apr. 26, 2001
Applicant:
Inventors:
Takashi Sugino, Osaka, JP;
Shigeru Nakajima, Kanagawa, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1322 ;
U.S. Cl.
CPC ...
H01L 2/1322 ;
Abstract
In manufacturing compound semiconductor device, a plasma treatment is carried out by exposing surface of compound semiconductor material including AlAs or InAs exposing in atmosphere at manufacturing process in plasma of gas including any of P, N, H, and Ar at substrate temperature of less than 200° C. Desirably a second plasma treatment is carried out by exposing said compound semiconductor material in plasma of gas including p at higher substrate temperature continuously after said plasma treatment without taking the substrate out in air.