The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Nov. 17, 2000
Denso Corporation, Kariya, JP;
Abstract
In a method for manufacturing a silicon carbide semiconductor device including a gate oxide film formed on a surface channel layer, the gate oxide film is formed by a thermal oxidation treatment that is performed at conditions under which a recrystallization reaction between silicon dioxide (SiO ) and carbon (C) occurs to produce silicon carbide (SiC) with a Gibbs free energy G being negative. The recrystallization reaction is expressed by a chemical formula of SiO +3C→SiC+2CO+G . Accordingly, residual carbon can be reduced at an interface between the gate oxide film and the surface channel layer.
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