Method for fabricating semiconductor device including stacked capacitors

Abstract

Disclosed is a method for fabricating a semiconductor device including stacked capacitors on a semiconductor substrate having a logic circuit region formed with a circuit and a RAM cell region formed with a plurality of transistors, involving the steps of forming an insulating film to a thickness corresponding to a height of stacked capacitors, to be formed, over an upper surface of the semiconductor substrate, partially removing the insulating film from the RAM cell region, thereby forming a space in which the stacked capacitors are to be formed, forming the stacked capacitors in the space, and partially removing the insulating film from the logic circuit region, and forming interconnection lines for the logic circuit in a space defined in the logic circuit region by virtue of the removal of the insulating film. In accordance with this method, steps formed during the formation of capacitors are removed prior to subsequent processing steps for forming layers over those capacitors. Accordingly, it is possible to accurately pattern the layers formed after the formation of the capacitors. It is also possible to achieve a desired fineness of interconnection lines.