The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Apr. 17, 2000
Applicant:
Inventor:
Manijeh Razeghi, Wilmette, IL (US);
Assignee:
MP Technologies LLC, Wilmette, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02S 5/183 ;
U.S. Cl.
CPC ...
H02S 5/183 ;
Abstract
An A1-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO . The active region and upper p-type DBR is then deposited by MOCVD.
Razeghi, Manijeh. (2002). Aluminum-free vertical cavity surface emitting lasers (vcsels) (U.S. Patent No. 6480520). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6480520
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile