The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Jan. 05, 2001
Applicant:
Inventors:
Kazufumi Ogawa, Nara, JP;
Kazuyasu Adachi, Kobe, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/904 ; H01L 3/120 ; H01L 3/1036 ; H01L 3/10376 ;
U.S. Cl.
CPC ...
H01L 2/904 ; H01L 3/120 ; H01L 3/1036 ; H01L 3/10376 ;
Abstract
A bottom-gate type thin-film transistor free from alignment shift of the gate electrode and from damage caused by injection of impurities. The crystal grains of a polycrystalline silicon thin-film are anisotropically grown to form a prescribed angle relative to the gate length direction. The angle between the gate length direction and the longitudinal direction of the grains is adjusted according to use of the liquid crystal display unit. The bottom-gate transistor includes an undercoat insulating layer containing impurities on the substrate. Impurities are diffused from the undercoat layer to the semiconductor layer by laser-annealing the amorphous silicon.