The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Apr. 30, 2001
Other;
Abstract
The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The semiconductor device manufacturing method comprises the steps of preparing a substrate from a surface of which copper wirings are exposed, and forming an interlayer insulating film having a low dielectric constant on the substrate wherein the interlayer insulating film is formed of a multi-layered insulating film including a insulating film that contacts with the copper wirings and the insulating film is formed by plasmanizing a film forming gas containing an alkyl compound having an Si—O—Si bond and one oxygen-containing gas selected from the group consisting of N O, H O, and CO , whose flow rate is equal to or less than a flow rate of the siloxane, to react mutually.