The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Aug. 11, 2000
Applicant:
Inventors:
Toshiharu Oya, Osaka, JP;
Kazumi Kurooka, Osaka, JP;
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
To provide a method for fabricating a nonvolatile semiconductor memory device in which the occurrence of a trap site formed in a tunnel oxide film can be suppressed so that W/E cycle of a memory cell transistor can be improved. A tunnel oxide film formed between a floating gate and a control gate is constituted by at least one CVD oxide film formed through chemical vapor-phase growth by a low pressure CVD method, and there is provided a step of heating the CVD oxide film in a nitriding atmosphere containing N O, NO or NH .