The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2002

Filed:

Sep. 06, 2001
Applicant:
Inventors:

Teruhisa Shibahara, Kanazawa, JP;

Tetsuzo Hara, Omihachiman, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/144 ; H01L 2/148 ; H01L 2/150 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/144 ; H01L 2/148 ; H01L 2/150 ;
Abstract

A semiconductor substrate is coupled to the upper side of a base. After the semiconductor substrate is processed, a lid material is anode-coupled to the semiconductor substrate. For the anode-coupling, first, the semiconductor substrate and the lid material are anode-coupled in a spot pattern. After this, the semiconductor substrate and the lid material are wholly anode-coupled to each other. Thereafter, the laminate including the base, the semiconductor substrate, and the lid material are divided and separated into predetermined individual areas. Thus, a vacuum container having a vacuum cavity formed inside of the laminate including the base layer, the semiconductor layer, and the lid layer can be formed. The vacuum degree of the vacuum cavity of the vacuum container is considerably enhanced compared to that by a conventional process of producing a vacuum container. In addition, scattering of the vacuum degrees of the vacuum cavities can be suppressed.


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