The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
May. 25, 2001
Applicant:
Inventors:
Jinlin Ye, South Easton, MA (US);
Jyh-Chia Chen, Ellicott City, MD (US);
Shirong Liao, South Easton, MA (US);
Hong K. Choi, Sharon, MA (US);
John C. C. Fan, Brookline, MA (US);
Assignee:
Kopin Corporation, Taunton, MA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/120 ;
Abstract
Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.