The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Oct. 02, 2000
James R. Shealy, Ithaca, NY (US);
Joseph A. Smart, Auburn, NY (US);
Cornell Research Foundation, Inc., Ithaca, NY (US);
Abstract
An epitaxial deposition process produces epitaxial lateral overgrowth (ELO) of nitride based materials directly a patterned substrate ( ). The substrate ( ) is preferably formed from SiC or sapphire, and is patterned with a mask ( ), preferably formed of silicon nitride, having a plurality of openings ( ) formed therein. A nucleation layer ( ), preferably formed of AlGaN, is grown at a high reactor temperature of 700-1100 degrees C., which wets the exposed substrate surface, without significant nucleation on the mask ( ). This eliminates the need for regrowth while producing smooth growth surfaces in the window openings ( ) as well as over the mask ( ). Subsequent deposition of a nitride based material layer ( ), preferably GaN, results in a relatively defect free planar surfaced material grown laterally over the mask ( ).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile