The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Dec. 18, 2000
Phil-Jung Kim, Kyoungki-do, KR;
Jae-Kyung Wee, Kyoungki-do, KR;
Chang-Hyuk Lee, Kyoungki-do, KR;
Young-Ho Seol, Kyoungki-do, KR;
Jin-Keun Oh, Kyoungki-do, KR;
Ho-Youb Cho, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
A memory repair circuit uses an antifuse of MOS structure, capable of repairing defective cells by constructing the antifuse by MOS transistors and programming the antifuse circuit properly. The memory repair circuit comprises a plurality of antifuse devices, each programmed when a power voltage and a negative voltage are supplied respectively to a first electrode and a second electrode thereof; a latch for detecting and latching program states of the antifuse devices; and a redundancy block for replacing a defect cell with a redundancy cell depending on the output of the latch.