The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Aug. 09, 2001
Keiichiro Takeda, Tokyo, JP;
Teruhiro Harada, Kanagawa, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A nonvolatile semiconductor memory comprises a cell bias circuit supplying a first voltage, a memory cell array having memory cell transistors, word lines, drain lines disposed perpendicular to the word lines and source lines disposed perpendicular to the word lines. the nonvolatile semiconductor memory further comprises source line equalizing transistors connected between the cell bias circuit and the source lines, respectively, the source line equalizing transistors turning on during a stand by mode, drain line equalizing transistors connected between the cell bias circuit and the drain lines, respectively, the drain line equalizing transistors turning on during the stand by mode, bit lines, main source lines, source line selecting transistors connected between the main source lines and the source lines, respectively, the source line selecting transistors turning off during the stand by mode, drain line selecting transistors connected between the bit lines and the drain lines, respectively, the drain line selecting transistors turning off during the stand by mode and a detecting circuit connected to said bit lines for supplying the first voltage to the bit lines for detecting data stored in the memory cells.