The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Nov. 06, 2001
Satoru Miyabe, Tokyo, JP;
Yasuhiro Sugimoto, Tsuzuki-ku, Yokohama-shi, Kanagawa-ken, JP;
Other;
Abstract
To provide a cascode amplifying circuit having large amplifying gain without narrowing an output operational range or deteriorating response performance of the circuit even with a constitution by a small number of elements is achieved by applying negative feedback from the source to the gate of an MOS transistor M provided with an output terminal at the drain via the source and the drain of an MOS transistor M of N-channel type, the source and the drain of an MOS transistor M of P-channel type and a current mirror constituted by MOS transistors M and M of N-channel type. By this constitution, operation of the MOS transistor M is not effected with influence of lowering of voltage of the source of the MOS transistor M a wide output operational range is provided and mirror effect with respect to gate/drain capacitance of the MOS transistor is restrained to thereby restrain a reduction in response speed.