The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Sep. 07, 2000
Jurriaan Schmitz, Eindhoven, NL;
Andreas H. Montree, Eindhoven, NL;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
In transistors with sub-micron channels, short-channel effects, such as a lowering of the threshold voltage, are usually suppressed by means of a halo (or pocket) implant in the source/drain regions, which operation is performed jointly with the LDD implantation. The halo implant, however, decreases the analog performance of transistors. To combine suppression of short-channel effects with a high analog performance, it is proposed to provide only transistors T , which are not intended for analog functions with the halo implant ( ), and to mask the analog transistors T with a mask ( ) against the halo implant. To avoid short-channel effects in T , this transistor is provided with a channel whose length is larger than that of transistor T .