The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Apr. 11, 2001
Applicant:
Inventor:
Yoshiro Baba, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/980 ;
U.S. Cl.
CPC ...
H01L 2/980 ;
Abstract
A power MOSFET includes an n -drain layer, a drain contact layer disposed on a first side of the drain layer, a p-type base layer disposed on a second side of the drain layer, and an n-source layer disposed on the base layer. A gate electrode faces, through a gate insulating film, a channel region, which is part of the base layer between the drain and source layers. Source and drain electrodes are electrically connected to the source and drain contact layers, respectively. A plurality of hetero regions having a dielectric constant higher than that of the drain layer is disposed in the drain layer between the source and drain electrodes.