The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Apr. 18, 2000
Applicant:
Inventor:
Tetsuya Taguwa, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
Abstract
There is provided a method for manufacturing a semiconductor device having a barrier metal layer, including the steps of forming a titanium film as the barrier metal layer on a silicon oxide film, forming a titanium nitride film, and oxidizing a surface of this titanium nitride film, then the titanium nitride film is formed thereon. This titanium nitride film is formed as taking in oxygen from an underlying oxide film. Therefore, its crystal growth is inhibited and its barrier metal layer property is improved.
Taguwa, Tetsuya. (2002). Semiconductor device having a barrier metal layer and method for manufacturing the same (U.S. Patent No. 6475907). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6475907
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile