The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2002

Filed:

Oct. 29, 2001
Applicant:
Inventors:

Hidetomo Nishimura, Miyagi, JP;

Makiko Nakamura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

A semiconductor device including a semiconductor substrate, and a plurality of first interconnects formed over the semiconductor substrate. A first insulating layer covers the plurality of first interconnects, and a second insulating layer is formed between the plurality of first interconnects. The second insulating layer has substantially the same height as the plurality of first interconnects. An intermediate insulating layer is formed over the second insulating layer.


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