The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Aug. 16, 1999
Applicant:
Inventors:
Norbert Galster, Rupperswil, CH;
Stefan Linder, Zofingen, CH;
Assignee:
ABB Schweiz Holding AG, Baden, CH;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/130 ;
U.S. Cl.
CPC ...
H01L 2/130 ;
Abstract
In a process for fabricating a semiconductor component, in particular a semiconductor diode, a semiconductor substrate ( ) is provided with metal layers ( ) in order to form electrode terminals and with passivation ( ), and is exposed to particle irradiation (P) in order to adjust the carrier lifetime. This being the case, at least the metal layer ( ) on the irradiation side and the passivation ( ) are not applied until after the particle irradiation (P). As a result, a continuous defect region ( ), which precludes undesired edge effects, is obtained in the semiconductor substrate ( ).