The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Dec. 29, 2000
Gerhard Franz, Munich, DE;
Osram Opto Semiconductors GmbH & Co. OHG, Regensburg, DE;
Abstract
A method for the production and formation of microscopic semiconductor light emitting diodes Is set out. The method comprises the steps of: producing a semiconductor light emitting device ( ) including a pn-junction ( ) and metallization layers ( ); applying an etching mask ( ) with a preset structure on one side of the semiconductor device ( ), whereby the masked areas of the arrangement form and correspond to the diodes to be formed ( ); applying a carrier ( ) on the other side of the semiconductor device ( ); vertically etching the semiconductor material in the openings of the etching mask ( ) to the carrier ( ) and thereby producing a diode arrangement containing a multiple number of diodes ( ) below the masked areas. In addition, the method further comprises: removing the etching mask ( ); providing an accommodating device ( ) containing slots ( ) with an arrangement and form that correspond to the numerous diodes, whereby the slots are suited for the reception of the diodes ( ) therein; engaging the diode arrangement into the accommodating device ( ); and removing of the carrier ( ). This method can be used for the production of a LED display device having a high pixel density.