The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2002

Filed:

Jul. 06, 2000
Applicant:
Inventors:

Steven Carter, Gwent, GB;

Christine Janet Shearer, Bristol, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1312 ;
U.S. Cl.
CPC ...
H01L 2/1312 ;
Abstract

An insulating layer is formed onto a surface of a semiconductor substrate by reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a short-chain polymer on the surface of the semiconductor substrate. A deposition rate of the short-chain polymer is increased by farther reacting a substance which associates readily with the compound containing the peroxide bonding.


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