The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2002

Filed:

Jul. 25, 2000
Applicant:
Inventors:

Enrico Gomiero, Padua, IT;

Federico Pio, Brugherio, IT;

Assignee:

STMicroeletronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract

The programming method comprises supplying a turnoff voltage to the source terminal of the selected cells when writing the cells. The turnoff voltage is a positive voltage of greater amplitude than the absolute value of the threshold voltage of the most written cell, i.e., the most depleted cell, taking into account the body effect. For example, the turnoff voltage may be 1 V greater than the absolute value of the threshold voltage of the most written cell. Advantageously, the turnoff voltage may be 5-6 V; to take into account the process, supply, and temperature variations, the turnoff voltage may be 7-8 V. The programming method is advantageously applicable to EEPROM memory devices with divided source lines, so as to apply the turnoff voltage only to the addressed byte or bytes, or to the page containing the addressed byte.


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