The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Jun. 19, 2001
Applicant:
Inventors:
Jiro Kishimoto, Hamura, JP;
Hiroshi Sato, Iruma, JP;
Satoshi Noda, Ome, JP;
Tatsuya Ishii, Koganei, JP;
Shoji Kubono, Ome, JP;
Takashi Ogino, Hamura, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/18 ; G05F 1/10 ; G11C 1/602 ;
U.S. Cl.
CPC ...
H02M 3/18 ; G05F 1/10 ; G11C 1/602 ;
Abstract
For a semiconductor integrated circuit having an internal booster circuit such as a flash memory, voltage booster circuits capable of generating a boosted voltage 10 times or more as high as a relatively low source voltage is to be realized. Charge pumps for carrying out first stage voltage boosting on the basis of a source voltage are configured of parallel capacity type units, and charge pumps for carrying out second stage voltage boosting on the basis of the boosted voltage generated by the first charge pumps are configured of serial capacity type units.