The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2002

Filed:

Jul. 11, 2001
Applicant:
Inventors:

Franciscus Petrus Widdershoven, Eindhoven, NL;

Jurriaan Schmitz, Eindhoven, NL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract

A semiconductor device comprising a non-volatile memory cell, for storing at least one bit, in a semiconductor substrate ( ) having, in the substrate, a source region ( ), a drain region ( ) and a channel region ( ) between the source ( ) and drain ( ) regions, and having, on top of the substrate, a floating gate ( ) separated from the channel region ( ) by a floating gate insulating layer, a select gate ( ) adjacent to the floating gate and separated from the channel region by a select gate insulating layer ( ), and a control gate ( ) separated from the floating gate ( ) by a control gate insulating layer, the floating gate being a non-conducting charge trapping dielectric layer ( ).


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