The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Oct. 13, 2000
Iwao Sugiyama, Kawasaki, JP;
Hiroshi Goto, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A photoelectric transducer comprises elements including P- and N-type regions to perform photoelectric conversion using photovoltaic effect of the P-N junction, and MOS transistors disposed around each element. A P-type well on which the MOS transistors are formed, has a higher impurity concentration than the P-type region. The P-type region has an impurity concentration distribution in which the concentration first increases gradually in the direction toward the interior, and then decreases gradually after a predetermined point of depth, and the maximum peak value of the concentration at the predetermined point is lower than the maximum peak value of the concentration of the P-type well. It becomes possible to improve sensitivity and reduce leakage current, besides, to realize a considerable reduction in cross talk with an adjacent pixel. A high-performance and highly-reliable photoelectric transducer can be obtained thus.