The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Sep. 08, 1999
Applicant:
Inventors:
Yu-Shan Wu, Hsinchu, TW;
Jian-Shihn Tsang, Hsinchu, TW;
Shih-Hsiung Chan, Hsinchu, TW;
Jan-Dar Guo, Hsinchu, TW;
Assignee:
Other;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/715 ; H01L 3/300 ;
U.S. Cl.
CPC ...
H01L 2/715 ; H01L 3/300 ;
Abstract
The present invention pertains to a light emitting diode with high luminance and method therefor, and specially to a light emitting diode having a selectively highly-doped low resistive layer of InGaAlP. The selectively highly-doped low resistive layer may be grown by the current epitaxy technique. Therefore, the light emitting diode of the present application may be mass produced, thus having industrial applicability.