The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Oct. 03, 2000
Pankaj B. Shah, Silver Spring, MD (US);
United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
A Silicon Carbide (SiC) Gate Turn-Off (GTO) thyristor is formed of a substrate having at least three epi-layers provided thereon as first, second and third doped regions, respectively, and the substrate being a fourth doped region, wherein the at least four doped regions alternate between a p-type doping and an n-type doping, with the regions being at least partially overlaid. An anode is arranged on the first region, and a base is arranged on the second region. A controlling gate is arranged on the third region, and a cathode is arranged on the fourth region. A current divider divides the load current between the anode and the base. This reduces the voltage drop of a portion of the load current passing through the thyristor, allowing for the switching of higher current densities than in prior art thyristors, faster switching speeds and reduced junction temperatures.