The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Apr. 03, 2001
Applicant:
Inventors:
Hiroshi Ikakura, Tokyo, JP;
Tomomi Suzuki, Tokyo, JP;
Kazuo Maeda, Tokyo, JP;
Yoshimi Shioya, Tokyo, JP;
Kouichi Ohira, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract
There is provided a method of forming a silicon-containing insulating film on a substrate by reacting a compound having siloxane bonds and Si—R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H .