The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Aug. 08, 2001
Applicant:
Inventors:
King Wai Kelwin Ko, San Jose, CA (US);
Mark S. Chang, Los Altos, CA (US);
Hao Fang, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1304 ;
U.S. Cl.
CPC ...
H01L 2/1304 ;
Abstract
A method and system for etching gate oxide during transistor fabrication is disclosed. The method and system begin by depositing a gate oxide on a substrate, followed by a deposition of a tunnel oxide mask over a portion of the gate oxide. The method and system further include performing a combination dry/wet-etch to remove the gate oxide uncovered by the tunnel oxide mask, which minimizes tunnel oxide undercut.
Quick Actions:
Ko, King Wai Kelwin. (2002). Method and system for etching tunnel oxide to reduce undercutting during memory array fabrication (U.S. Patent No. 6472327). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6472327
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile