The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Jan. 27, 2000
Donald C. Dennis, Orlando, FL (US);
Nace Layadi, Orlando, FL (US);
Simon J. Molloy, Orlando, FL (US);
Kurt G. Steiner, Orlando, FL (US);
Sylvia W. Thomas, Orlando, FL (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
The present invention provides a method of manufacturing an integrated circuit having a capping layer over a thick metal feature. In one embodiment, the method comprises forming first and second oxide layers over the thick metal feature, forming a composite oxide layer including an oxide spacer by etching the first and second oxide layers, and forming a capping layer over the composite oxide layer. More specifically, forming the first oxide layer involves using a high density plasma (HDP) process, forming the second oxide layer involves using a plasma enhanced chemical vapor deposition (PECVD) process, and forming the composite oxide layer preferably involves etching with a reactive ion etch.