The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Sep. 29, 2000
Kazufumi Ogawa, Nara, JP;
Kazuyasu Adachi, Kobe, JP;
Abstract
There is suggested a method for forming a good-quality polysilicon layer having a large area through a low temperature process even if laser annealing is not conducted. An object of the present invention is therefore to provide a poly-Si TFT array substrate exhibiting little display unevenness and having a high exactitude even if it has a large screen. This object can be attained by a method for producing a TFT array substrate for a liquid crystal display device, comprising a process of forming, on a substrate, a poly-Si TFT in which a polysilicon semiconductor layer is used in a channel area, comprising a polysilicon layer forming step of depositing silicon particles excited by adding energy beforehand onto the substrate so that the polysilicon layer is formed at the stage when the silicon particles are deposited on the substrate.