The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2002

Filed:

Jan. 12, 2001
Applicant:
Inventors:

Atsushi Shiozaki, Kyoto-fu, JP;

Masafumi Sano, Kyoto-fu, JP;

Toshimitsu Kariya, Kyoto-fu, JP;

Takaharu Kondo, Kyotanabe, JP;

Makoto Higashikawa, Nara, JP;

Koichi Matsuda, Kyotanabe, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 3/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 3/100 ;
Abstract

A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.


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