The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Jul. 10, 2001
Applicant:
Inventors:
Yang Wu, Hsinchu, TW;
Chi-Chao Wan, Hsinchu, TW;
Assignee:
Chang Chun Petrochemical Co., Ltd., Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 1/18 ; B05D 3/04 ; C23C 2/802 ;
U.S. Cl.
CPC ...
B05D 1/18 ; B05D 3/04 ; C23C 2/802 ;
Abstract
A process for the fabrication of submicron copper interconnection useful on IC structures without deposition of copper seed is described. A dense metal layer can be deposited through contact displacement reaction between diffusion barrier layer and metal ions in solution under appropriate conditions. The metal layer formed by the displacement deposition can serve as the conducting material for subsequent copper electroplating. Moreover, the costly process for applying seed layer through CVD or PVD can be eliminated.