The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
May. 01, 1997
Satoshi Ogino, Tokyo, JP;
Takahiro Maruyama, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A plasma reactor is provided for achieving extension of etching parameters to reduce charge-up shape anomaly and to improve selectivity, uniformity and workability in a dry etching process. An RF power fluctuates in cycles, each one of the cycles including first and second subcycles ( ), ( ) with different frequencies. The RF power in the first subcycles ( ) is higher in frequency than that in the second subcycles ( ). A charge accumulated during the first subcycles ( ) in which the RF power of high frequency is applied can be relieved during the second subcycles ( ) in which the RF power of low frequency is applied. At the same time, deterioration in an etching rate occurring with the application of only the RF power of low frequency can be relieved by applying the RF power of high frequency during the first subcycles ( ).