The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Aug. 03, 1999
Applicant:
Inventors:
Shigeki Hashimoto, Kanagawa, JP;
Katsunori Yanashima, Kanagawa, JP;
Tsunenori Asatsuma, Kanagawa, JP;
Masao Ikeda, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/514 ;
U.S. Cl.
CPC ...
C30B 2/514 ;
Abstract
When nitride series III-V group compound semiconductor is manufactured by gas phase growing using starting material for a group III element, ammonia as a starting material for a group V element and hydrogen, the gas phase molar ratio of hydrogen to the total amount of hydrogen and ammonia (H /(H +NH )) is specified to 0.3<(H /(H +NH ))<0.7, 0.3<(H /(H +NH ))<0.6 or 0.4<(H /(H +NH ))<0.5. A nitride series III-V group compound semiconductor can thus be manufactured with less non-emission center and of excellent crystallinity.