The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Jul. 03, 2001
Norbert Galster, Rupperswil, CH;
ABB Schweiz AG, Baden, CH;
Abstract
In a method for producing a high-speed power diode with soft recovery, in which method the carrier life within the associated semiconductor substrate ( ) is governed by first, unmasked bombardment ( ) with an axial profile and by subsequent, second, masked bombardment ( ) with a lateral profile, improved reverse characteristics are achieved in that the first, unmasked bombardment is ion bombardment ( ) which governs the switching response of the power diode and in that the second, masked bombardment is electron bombardment ( ), which reduces the active area of the power diode. In a power diode equipped with such a semiconductor substrate ( ), the thermal resistance R is reduced in relation to the active area of the power diode.