The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Jul. 25, 2000
Kuo-Tung Sung, Hsinchu, TW;
Ray C. Lee, Hsinchu, TW;
Mosel Vitelic, Inc., Hsinchu, TW;
Abstract
A method and resulting integrated circuit device ( ) such as a flash memory device and resulting cell. The method includes a step of providing a substrate ( ), which has an active region overlying a thin layer of dielectric material ( ). The method uses a step of forming a floating gate layer ( ) overlying the thin layer of dielectric material ( ), which is commonly termed a “tunnel oxide” layer, but is not limited to such a layer or material. The floating gate layer ( ) has novel geometric features including slant edges ( ), which extend to the dielectric material ( ). The slant edges ( ) create a smaller geometric area for the tunnel oxide region relative to the area between the floating gate layer and the control gate layer.