The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Feb. 02, 2001
Applicant:
Inventors:
Takahiro Onakado, Hyogo, JP;
Satoshi Shimizu, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
A trench isolating oxide film is formed in a groove formed at a silicon substrate. Floating gate electrodes and control gate electrodes are formed on trench isolating oxide film. An opening exposing the surface of silicon substrate is formed in a region located between the floating gate electrodes and others. The control gate electrodes are covered with a BPTEOS film filling opening. A void is formed within opening filled with BPTEOS film. The void suppresses occurrence of crystal defects in the silicon substrate, and the semiconductor device ensuring high reliability and high yield is obtained.