The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Jun. 03, 1999
Applicant:
Inventors:
Kiyoteru Kobayashi, Hyogo, JP;
Naoki Tsuji, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/994 ;
Abstract
A non-volatile semiconductor memory device allowing accurate reading of data, having superior charge detection characteristic and high rewriting durability, and free of undesirable writing of a non-selected memory cell transistor is provided. A memory cell transistor includes a silicon substrate having a main surface, a plurality of strip shaped isolating oxide films and formed on the main surface of silicon substrate to continuously extend approximately along the < > direction, and strip shaped source and drain regions and formed on the main surface of silicon substrate to continuously extend approximately along the < > direction.