The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Mar. 29, 2001
Applicant:
Inventors:
Koji Arita, Colorado Springs, CO (US);
Shinichiro Hayashi, Osaka, JP;
Tatsuo Otsuki, Osaka, JP;
Carlos A. Paz de Araujo, Colorado Springs, CO (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/994 ;
Abstract
A ferroelectric FET having an interface insulator layer containing ZrO . The ferroelectric FET includes a gate oxide layer, the interface insulator layer is located on the gate oxide layer, and ferroelectric layered superlattice material is located on the interface insulator layer, The interface insulator layer has a thickness of from 15 to 25 nanometers.